NTS2101PT1G
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NTS2101PT1G is a discrete semiconductor made by onsemi, in a SOT-323 package. Quote within 24 hours.
Key facts
| Part number | NTS2101PT1G |
|---|---|
| Manufacturer | onsemi |
Specifications
| Drain-to-Source Voltage (V(BR)DSS / VDSS) | −8.0 V (p. 1) |
|---|---|
| Continuous Drain Current (TA = 25 °C, steady state) | −1.4 A (p. 1) |
| Gate-to-Source Voltage | ±8.0 V (p. 1) |
| RDS(on) at VGS = −4.5 V | 典型 65 mΩ，最大 100 mΩ (ID = −1.0 A) (p. 2) |
| RDS(on) at VGS = −2.5 V | 典型 78 mΩ，最大 140 mΩ (ID = −0.5 A) (p. 2) |
| RDS(on) at VGS = −1.8 V | 典型 117 mΩ，最大 210 mΩ (ID = −0.3 A) (p. 2) |
| Gate Threshold Voltage | 最小 −0.45 V，典型 −0.7 V，最大 −1.0 V (p. 2) |
| Pulsed Drain Current | −3.0 A (tp = 10 µs) (p. 1) |
| Power Dissipation (TA = 25 °C, steady state) | 0.29 W (p. 1) |
| Operating Junction and Storage Temperature | −55 to 150 °C (p. 1) |
| Package | SOT-323 (SC-70), Pb-Free (p. 1) |
Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗
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