NTHD4P02FT1G
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NTHD4P02FT1G is a discrete semiconductor made by onsemi, in a ChipFET package. Quote within 24 hours.
Key facts
| Part number | NTHD4P02FT1G |
|---|---|
| Manufacturer | onsemi |
Specifications
| MOSFET Drain-to-Source Voltage (VDSS) | −20 V (p. 1) |
|---|---|
| Gate-to-Source Voltage (VGS) | ±12 V (p. 1) |
| MOSFET Continuous Drain Current (t ≤ 5 s, TJ = 25°C) | −3.0 A (p. 1) |
| MOSFET On-Resistance RDS(on) TYP | −130 mΩ @ −4.5 V; 200 mΩ @ −2.5 V (p. 1) |
| Schottky DC Blocking Voltage (VR) | 20 V (p. 1) |
| Schottky Average Rectified Forward Current | 2.2 A (steady state); 3.0 A (t ≤ 5 s) (p. 2) |
| Schottky Forward Voltage VF (IF = 1.0 A) | 典型 0.510 V，最大 0.575 V (p. 3) |
| Gate Threshold Voltage VGS(TH) | 最小 −0.6 V，典型 −0.75 V，最大 −1.2 V (p. 2) |
| Operating Junction and Storage Temperature | −55 to 150 °C (p. 1) |
| Package | ChipFET (p. 1) |
Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗
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