NTHD3101FT1G

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NTHD3101FT1G is a discrete semiconductor made by onsemi, in a ChipFET package. Quote within 24 hours.

Key facts

Part numberNTHD3101FT1G
Manufactureronsemi

Specifications

Drain-to-Source Voltage (VDSS)−20 V (p. 1)
Gate-to-Source Voltage (VGS)±8.0 V (p. 1)
Continuous Drain Current (steady state, TJ = 25°C)−3.2 A (p. 1)
RDS(on) typ at VGS = −4.5 V64 mΩ @ −4.5 V (p. 1)
RDS(on) typ at VGS = −2.5 V85 mΩ @ −2.5 V (p. 1)
Schottky Reverse Voltage (VR MAX)20 V (p. 1)
Schottky Forward Voltage (VF)典型 0.510 V,最大 0.575 V (IF = 1.0 A) (p. 3)
Schottky Forward Current (IF MAX)4.1 A (p. 1)
Operating Junction and Storage Temperature−55 to 150 °C (p. 1)
PackageChipFET, CASE 1206A (p. 1)

Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗

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