NSS20200LT1G
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NSS20200LT1G is a discrete semiconductor made by onsemi, in a SOT-23 package. Quote within 24 hours.
Key facts
| Part number | NSS20200LT1G |
|---|---|
| Manufacturer | onsemi |
Specifications
| Collector-Emitter Voltage (VCEO) | −20 Vdc (p. 2) |
|---|---|
| Collector Current - Continuous (IC) | −2.0 A (p. 2) |
| Collector Current - Peak (ICM) | −4.0 A (p. 2) |
| Collector-Emitter Saturation Voltage (IC = −1.0 A, IB = −0.100 A) | 典型 −0.065 V,最大 −0.090 V (p. 3) |
| DC Current Gain hFE (IC = −500 mA, VCE = −2.0 V) | 最小 250,典型 300 (p. 3) |
| Cutoff Frequency (fT) | 最小 100 MHz (p. 3) |
| Total Device Dissipation (TA = 25°C, Note 2) | 最大 540 mW (p. 2) |
| Junction and Storage Temperature Range | −55 to +150 °C (p. 2) |
| Package | SOT−23 (TO−236), CASE 318 (p. 1) |
| Equivalent RDS(on) | 65 mΩ (p. 1) |
Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗
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