NSS12100UW3TCG
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NSS12100UW3TCG by onsemi: details are being verified. Quote within 24 hours.
Key facts
| Part number | NSS12100UW3TCG |
|---|---|
| Manufacturer | onsemi |
Specifications
| Collector-Emitter Voltage (VCEO) | −12 Vdc (Max rating) (p. 1) |
|---|---|
| Collector Current - Continuous (IC) | −1.0 Adc (p. 1) |
| Collector Current - Peak (ICM) | −2.0 Adc (p. 1) |
| Emitter-Base Voltage (VEBO) | −5.0 Vdc (p. 1) |
| Collector-Emitter Saturation Voltage (IC = −0.5 A, IB = −0.050 A) | 典型 −0.200 V,最大 −0.225 V (p. 2) |
| DC Current Gain hFE (IC = −500 mA, VCE = −2.0 V) | 最小 100,最大 250 (p. 2) |
| Current-Gain Bandwidth Product (fT) | 最小 200 MHz (p. 2) |
| Total Device Dissipation PD (TA = 25 °C) | 740 mW (100 mm² FR-4);1.1 W (500 mm² FR-4) (p. 2) |
| Junction and Storage Temperature Range | −55 to +150 °C (p. 2) |
| Package | WDFN3 (CASE 506AU),2x2,1.3P (p. 1) |
Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗
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