onsemi · discrete semiconductor · SOT-23
MMBT3906LT1G
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MMBT3906LT1G is a discrete semiconductor made by onsemi, in a SOT-23 package. Quote within 24 hours.
Key facts
| Standard part number | MMBT3906LT1G |
|---|---|
| Manufacturer | onsemi |
| Category | discrete semiconductor |
| Package | SOT-23 |
Specifications
| Collector-Emitter Voltage (VCEO) | −40 Vdc (p. 1) |
|---|---|
| Collector-Base Voltage (VCBO) | −40 Vdc (p. 1) |
| Emitter-Base Voltage (VEBO) | −5.0 Vdc (p. 1) |
| Collector Current - Continuous (IC) | −200 mAdc (p. 1) |
| Collector Current - Peak (ICM) | −800 mAdc (p. 1) |
| Total Device Dissipation FR-5 Board (PD) | 225 mW (TA = 25 °C) (p. 1) |
| Junction and Storage Temperature | −65 to +150 °C (p. 1) |
| Package | SOT−23 (TO−236), CASE 318 (p. 1) |
| DC Current Gain (hFE) | 最小 100，最大 300 (IC = −10 mAdc, VCE = −1.0 Vdc) (p. 2) |
| Current-Gain Bandwidth Product (fT) | 最小 250 MHz (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (p. 2) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 最大 −0.25 Vdc (IC = −10 mAdc, IB = −1.0 mAdc) (p. 2) |
Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗
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