Fairchild Semiconductor · discrete semiconductor · TO-247
HGTG11N120CND
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HGTG11N120CND is a discrete semiconductor made by Fairchild Semiconductor, in a TO-247 package. Quote within 24 hours.
Key facts
| Standard part number | HGTG11N120CND |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Category | discrete semiconductor |
| Package | TO-247 |
Specifications
| Collector-Emitter Voltage (BVCES) | 1200 V (p. 2) |
|---|---|
| Continuous Collector Current at TC = 25 °C | 43 A (p. 2) |
| Continuous Collector Current at TC = 110 °C | 22 A (p. 2) |
| Pulsed Collector Current | 80 A (p. 2) |
| Gate-Emitter Voltage Continuous | ±20 V (p. 2) |
| Collector-Emitter Saturation Voltage at IC = 11 A, VGE = 15 V, TC = 25 °C | 典型 2.1 V,最大 2.4 V (p. 3) |
| Gate-Emitter Threshold Voltage | 最小 6.0 V,典型 6.8 V (p. 3) |
| Total Power Dissipation at TC = 25 °C | 298 W (p. 2) |
| Operating and Storage Junction Temperature Range | −55 to 150 °C (p. 2) |
| Thermal Resistance Junction to Case (IGBT) | 最大 0.42 °C/W (p. 3) |
| Package | TO-247 (TO-247-3LD) (p. 1) |
Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗
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