FGL60N100BNTD
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FGL60N100BNTD by Fairchild Semiconductor: details are being verified. Quote within 24 hours.
Key facts
| Part number | FGL60N100BNTD |
|---|---|
| Manufacturer | Fairchild Semiconductor |
Specifications
| Collector to Emitter Voltage (VCES) | 1000 V (p. 1) |
|---|---|
| Gate to Emitter Voltage (VGES) | ±25 V (p. 1) |
| Collector Current @ TC = 25°C | 60 A (p. 1) |
| Collector Current @ TC = 100°C | 42 A (p. 1) |
| Pulsed Collector Current @ TC = 25°C | 200 A (p. 1) |
| Collector-Emitter Saturation Voltage (IC = 60 A, VGE = 15 V) | 典型 2.5 V，最大 2.9 V (p. 2) |
| Gate-Emitter Threshold Voltage | 4.0 V ~ 7.0 V，典型 5.0 V (p. 2) |
| Maximum Power Dissipation @ TC = 25°C | 180 W (p. 1) |
| Operating Junction Temperature | -55 to +150 °C (p. 1) |
| Thermal Resistance, Junction to Case (IGBT) | 0.69 °C/W (p. 1) |
| Package | TO-264 (p. 2) |
Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗
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