Fairchild Semiconductor · discrete semiconductor · SOT-23

FDN302P

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FDN302P is a discrete semiconductor made by Fairchild Semiconductor, in a SOT-23 package. Quote within 24 hours.

Key facts

Standard part numberFDN302P
ManufacturerFairchild Semiconductor
Categorydiscrete semiconductor
PackageSOT-23

Specifications

Drain-Source Voltage (VDSS)−20 V (p. 1)
Continuous Drain Current (ID)−2.4 A (p. 1)
Pulsed Drain Current−10 A (p. 1)
On-Resistance RDS(on) @ VGS = −4.5 V典型 44 mΩ,最大 55 mΩ (ID = −2.4 A) (p. 2)
On-Resistance RDS(on) @ VGS = −2.5 V典型 64 mΩ,最大 80 mΩ (ID = −2 A) (p. 2)
Gate-Source Voltage (VGSS)±12 V (p. 1)
Gate Threshold Voltage VGS(th)最小 −0.6 V,典型 −1.0 V,最大 −1.5 V (p. 2)
Total Gate Charge (Qg)典型 9 nC,最大 14 nC (p. 2)
Power Dissipation (PD)0.5 W (Note 1a);0.46 W (Note 1b) (p. 1)
Operating Junction Temperature Range−55 to +150 °C (p. 1)
PackageSOT−23 (Pb−Free/Halide Free) (p. 1)

Source: manufacturer datasheet (page numbers in brackets) · Manufacturer datasheet ↗

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